JPH0148652B2 - - Google Patents

Info

Publication number
JPH0148652B2
JPH0148652B2 JP58011847A JP1184783A JPH0148652B2 JP H0148652 B2 JPH0148652 B2 JP H0148652B2 JP 58011847 A JP58011847 A JP 58011847A JP 1184783 A JP1184783 A JP 1184783A JP H0148652 B2 JPH0148652 B2 JP H0148652B2
Authority
JP
Japan
Prior art keywords
sio
film
pattern
photoresist
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58011847A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59136935A (ja
Inventor
Kohei Eguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP1184783A priority Critical patent/JPS59136935A/ja
Publication of JPS59136935A publication Critical patent/JPS59136935A/ja
Publication of JPH0148652B2 publication Critical patent/JPH0148652B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
JP1184783A 1983-01-27 1983-01-27 半導体装置の製造方法 Granted JPS59136935A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1184783A JPS59136935A (ja) 1983-01-27 1983-01-27 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1184783A JPS59136935A (ja) 1983-01-27 1983-01-27 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS59136935A JPS59136935A (ja) 1984-08-06
JPH0148652B2 true JPH0148652B2 (en]) 1989-10-20

Family

ID=11789108

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1184783A Granted JPS59136935A (ja) 1983-01-27 1983-01-27 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS59136935A (en])

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61226942A (ja) * 1985-04-01 1986-10-08 Matsushita Electronics Corp 半導体集積回路の素子間分離方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5649526A (en) * 1979-09-29 1981-05-06 Toshiba Corp Manufacture of semiconductor device
JPS5718327A (en) * 1980-07-09 1982-01-30 Matsushita Electric Ind Co Ltd Production of semiconductor device
JPS5732640A (en) * 1980-08-06 1982-02-22 Mitsubishi Electric Corp Production of semiconductor device
JPS5768035A (en) * 1980-10-15 1982-04-26 Toshiba Corp Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS59136935A (ja) 1984-08-06

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